| 參數(shù)名稱 | 參數(shù)值 |
|---|---|
| Product Status | Active |
| Diode Configuration | 1 Pair Common Cathode |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) (per Diode) | 20A |
| Voltage - Forward (Vf) (Max) @ If | 1.45 V @ 10 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 50 μA @ 650 V |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247 |
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Bourns, Inc. 二極管陣列 產(chǎn)品 BSDW20S65C6
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