STGB30H65DFB2
￥19.37
TRENCH GATE FIELD-STOP 650 V, 30
| 參數(shù)名稱 | 參數(shù)值 |
|---|---|
| Product Status | Active |
| IGBT Type | Trench Field Stop |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector (Ic) (Max) | 50 A |
| Current - Collector Pulsed (Icm) | 90 A |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 30A |
| Power - Max | 167 W |
| Switching Energy | 270μJ (on), 310μJ (off) |
| Input Type | Standard |
| Gate Charge | 90 nC |
| Td (on/off) @ 25°C | 18.4ns/71ns |
| Test Condition | 400V, 30A, 6.8Ohm, 15V |
| Reverse Recovery Time (trr) | 115 ns |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-4, D2Pak (3 Leads + Tab), TO-263AA |
| Supplier Device Package | D2PAK-3 |
新聞資訊
STMicroelectronics 單 IGBT 產(chǎn)品 STGB30H65DFB2
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