RHU002N06T106
￥3.02
MOSFET N-CH 60V 200MA UMT3
| 參數(shù)名稱 | 參數(shù)值 |
|---|---|
| Product Status | Not For New Designs |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 200mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Rds On (Max) @ Id, Vgs | 2.4Ohm @ 200mA, 10V |
| Vgs(th) (Max) @ Id | - |
| Gate Charge (Qg) (Max) @ Vgs | 4.4 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 15 pF @ 10 V |
| FET Feature | - |
| Power Dissipation (Max) | 200mW (Ta) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | UMT3 |
| Package / Case | SC-70, SOT-323 |
新聞資訊
ROHM Semiconductor 單 FET、MOSFET 產(chǎn)品 RHU002N06T106
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