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R8005ANJFRGTL

¥23.11
單 FET、MOSFET

MOSFET N-CH 800V 5A LPTS

參數(shù)名稱參數(shù)值
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800 V
Current - Continuous Drain (Id) @ 25°C5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.1Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs20 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds500 pF @ 25 V
FET Feature-
Power Dissipation (Max)120W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageLPTS
Package / CaseTO-263-3, D2Pak (2 Leads + Tab), TO-263AB

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