| 參數(shù)名稱 | 參數(shù)值 |
|---|---|
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 80 V |
| Current - Continuous Drain (Id) @ 25°C | 200A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 2.3mOhm @ 100A, 10V |
| Vgs(th) (Max) @ Id | 3.2V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs | 156 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 12200 pF @ 40 V |
| FET Feature | - |
| Power Dissipation (Max) | 375W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | DDPAK/TO-263-3 |
| Package / Case | TO-263-4, D2Pak (3 Leads + Tab), TO-263AA |
新聞資訊
Texas Instruments 單 FET、MOSFET 產(chǎn)品 CSD19506KTT
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