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CSD23202W10T

¥6.98
單 FET、MOSFET

MOSFET P-CH 12V 2.2A 4DSBGA

參數(shù)名稱參數(shù)值
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)12 V
Current - Continuous Drain (Id) @ 25°C2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Rds On (Max) @ Id, Vgs53mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id900mV @ 250μA
Gate Charge (Qg) (Max) @ Vgs3.8 nC @ 4.5 V
Vgs (Max)-6V
Input Capacitance (Ciss) (Max) @ Vds512 pF @ 6 V
FET Feature-
Power Dissipation (Max)1W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package4-DSBGA (1x1)
Package / Case4-UFBGA, DSBGA

新聞資訊

Texas Instruments 單 FET、MOSFET 產(chǎn)品 CSD23202W10T

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