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CSD22206WT

¥9.50
單 FET、MOSFET

MOSFET P-CH 8V 5A 9DSBGA

參數(shù)名稱參數(shù)值
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)8 V
Current - Continuous Drain (Id) @ 25°C5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs5.7mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id1.05V @ 250μA
Gate Charge (Qg) (Max) @ Vgs14.6 nC @ 4.5 V
Vgs (Max)-6V
Input Capacitance (Ciss) (Max) @ Vds2275 pF @ 4 V
FET Feature-
Power Dissipation (Max)1.7W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package9-DSBGA
Package / Case9-UFBGA, DSBGA

新聞資訊

Texas Instruments 單 FET、MOSFET 產(chǎn)品 CSD22206WT

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