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R6025JNZ4C13

¥68.47
單 FET、MOSFET

MOSFET N-CH 600V 25A TO247G

參數(shù)名稱參數(shù)值
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)15V
Rds On (Max) @ Id, Vgs182mOhm @ 12.5A, 15V
Vgs(th) (Max) @ Id7V @ 4.5mA
Gate Charge (Qg) (Max) @ Vgs57 nC @ 15 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1900 pF @ 100 V
FET Feature-
Power Dissipation (Max)306W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247G
Package / CaseTO-247-3

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ROHM Semiconductor 單 FET、MOSFET 產(chǎn)品 R6025JNZ4C13

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