RD3P02BATTL1
￥11.59
PCH -100V -20A POWER MOSFET: RD3
| 參數(shù)名稱 | 參數(shù)值 |
|---|---|
| Product Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 116mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1480 pF @ 50 V |
| FET Feature | - |
| Power Dissipation (Max) | 56W (Ta) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
新聞資訊
ROHM Semiconductor 單 FET、MOSFET 產(chǎn)品 RD3P02BATTL1
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