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R6007RND3TL1

¥11.38
單 FET、MOSFET

600V 7A TO-252, PRESTOMOS WITH I

參數(shù)名稱參數(shù)值
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)15V
Rds On (Max) @ Id, Vgs940mOhm @ 3.5A, 15V
Vgs(th) (Max) @ Id7V @ 1mA
Gate Charge (Qg) (Max) @ Vgs17.5 nC @ 15 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds460 pF @ 100 V
FET Feature-
Power Dissipation (Max)96W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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ROHM Semiconductor 單 FET、MOSFET 產(chǎn)品 R6007RND3TL1

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