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RS6P100BHTB1

¥23.18
單 FET、MOSFET

NCH 100V 100A, HSOP8, POWER MOSF

參數(shù)名稱參數(shù)值
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs5.9mOhm @ 90A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs45 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2880 pF @ 50 V
FET Feature-
Power Dissipation (Max)104W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-HSOP
Package / Case8-PowerTDFN

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ROHM Semiconductor 單 FET、MOSFET 產(chǎn)品 RS6P100BHTB1

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