IXTA1R6N100D2
￥23.26
MOSFET N-CH 1000V 1.6A TO263
| 參數(shù)名稱(chēng) | 參數(shù)值 |
|---|---|
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 1000 V |
| Current - Continuous Drain (Id) @ 25°C | 1.6A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 10Ohm @ 800mA, 0V |
| Vgs(th) (Max) @ Id | - |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 5 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 645 pF @ 25 V |
| FET Feature | Depletion Mode |
| Power Dissipation (Max) | 100W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-263AA |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
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Littelfuse 單 FET、MOSFET 產(chǎn)品 IXTA1R6N100D2
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