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RX3R10BBHC16

¥59.33
單 FET、MOSFET

NCH 150V 105A, TO-220AB, POWER M

參數(shù)名稱參數(shù)值
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)150 V
Current - Continuous Drain (Id) @ 25°C105A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs8.8mOhm @ 50A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs130 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds7550 pF @ 75 V
FET Feature-
Power Dissipation (Max)181W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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ROHM Semiconductor 單 FET、MOSFET 產(chǎn)品 RX3R10BBHC16

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