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R6535KNZC17

¥56.52
單 FET、MOSFET

MOSFET N-CH 650V 35A TO3

參數(shù)名稱參數(shù)值
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs115mOhm @ 18.1A, 10V
Vgs(th) (Max) @ Id5V @ 1.21mA
Gate Charge (Qg) (Max) @ Vgs72 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3000 pF @ 25 V
FET Feature-
Power Dissipation (Max)102W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3PF
Package / CaseTO-3P-3 Full Pack

新聞資訊

ROHM Semiconductor 單 FET、MOSFET 產(chǎn)品 R6535KNZC17

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