| 參數(shù)名稱 | 參數(shù)值 |
|---|---|
| Product Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 12 V |
| Current - Continuous Drain (Id) @ 25°C | 2.2A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Rds On (Max) @ Id, Vgs | 53mOhm @ 500mA, 4.5V |
| Vgs(th) (Max) @ Id | 900mV @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs | 3.8 nC @ 4.5 V |
| Vgs (Max) | -6V |
| Input Capacitance (Ciss) (Max) @ Vds | 512 pF @ 6 V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 4-DSBGA (1x1) |
| Package / Case | 4-UFBGA, DSBGA |
新聞資訊
Texas Instruments 單 FET、MOSFET 產(chǎn)品 CSD23202W10
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