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BSS84XHZGG2CR

¥4.18
單 FET、MOSFET

MOSFET P-CH 60V 230MA DFN1010-3W

參數(shù)名稱參數(shù)值
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C230mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs5.3Ohm @ 230mA, 10V
Vgs(th) (Max) @ Id2.5V @ 100μA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds34 pF @ 30 V
FET Feature-
Power Dissipation (Max)1W (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDFN1010-3W
Package / Case3-XFDFN

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