RF4L070BGTCR
￥7.85
NCH 60V 7A, HUML2020L8, POWER MO
| 參數(shù)名稱 | 參數(shù)值 |
|---|---|
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 7A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 27mOhm @ 7A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 7.6 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 460 pF @ 30 V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | DFN2020-8S |
| Package / Case | 8-PowerUDFN |
新聞資訊
ROHM Semiconductor 單 FET、MOSFET 產(chǎn)品 RF4L070BGTCR
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