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RQ7L055BGTCR

¥7.92
單 FET、MOSFET

NCH 60V 5.5A, TSMT8, POWER MOSFE

參數(shù)名稱參數(shù)值
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C5.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs29mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs7.6 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds460 pF @ 30 V
FET Feature-
Power Dissipation (Max)1.1W (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTSMT8
Package / Case8-SMD, Flat Lead

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ROHM Semiconductor 單 FET、MOSFET 產(chǎn)品 RQ7L055BGTCR

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