STL19N60DM2
￥25.06
MOSFET N-CH 600V 11A PWRFLAT HV
| 參數(shù)名稱(chēng) | 參數(shù)值 |
|---|---|
| Product Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 320mOhm @ 5.5A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 10 V |
| Vgs (Max) | ±25V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| FET Feature | - |
| Power Dissipation (Max) | 90W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerFlat? (8x8) HV |
| Package / Case | 8-PowerVDFN |
新聞資訊
STMicroelectronics 單 FET、MOSFET 產(chǎn)品 STL19N60DM2
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