| 參數名稱 | 參數值 |
|---|---|
| Product Status | Obsolete |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Rds On (Max) @ Id, Vgs | 690mOhm @ 6A, 20V |
| Vgs(th) (Max) @ Id | 3.5V @ 250μA (Typ) |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 20 V |
| Vgs (Max) | +25V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 300 pF @ 1000 V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | HiP247? Long Leads |
| Package / Case | TO-247-3 |
新聞資訊
STMicroelectronics 單 FET、MOSFET 產品 SCTWA10N120
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