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STSJ100NHS3LL

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單 FET、MOSFET

MOSFET N-CH 30V 100A 8SOIC

參數(shù)名稱參數(shù)值
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs4.2mOhm @ 10A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs35 nC @ 4.5 V
Vgs (Max)±16V
Input Capacitance (Ciss) (Max) @ Vds4200 pF @ 25 V
FET Feature-
Power Dissipation (Max)3W (Ta), 70W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SOIC-EP
Package / Case8-SOIC (0.154", 3.90mm Width) Exposed Pad

新聞資訊

STMicroelectronics 單 FET、MOSFET 產(chǎn)品 STSJ100NHS3LL

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