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RSS090P03FU6TB1

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單 FET、MOSFET

MOSFET P-CH 30V 9A 8SOP

參數(shù)名稱(chēng)參數(shù)值
Product StatusObsolete
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Rds On (Max) @ Id, Vgs14mOhm @ 9A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs39 nC @ 5 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4000 pF @ 10 V
FET Feature-
Power Dissipation (Max)2W (Ta)
Operating Temperature150°C
Mounting TypeSurface Mount
Supplier Device Package8-SOP
Package / Case8-SOIC (0.154", 3.90mm Width)

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ROHM Semiconductor 單 FET、MOSFET 產(chǎn)品 RSS090P03FU6TB1

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