參數名稱 | 參數值 |
---|---|
Product Status | Active |
Technology | Silicon Carbide (SiC) |
Configuration | 2 N-Channel |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C | 291A (Tc) |
Rds On (Max) @ Id, Vgs | - |
Vgs(th) (Max) @ Id | 4.8V @ 145.6mA |
Gate Charge (Qg) (Max) @ Vgs | - |
Input Capacitance (Ciss) (Max) @ Vds | 30000pF @ 10V |
Power - Max | 925W (Tc) |
Operating Temperature | 175°C (TJ) |
Mounting Type | Chassis Mount |
Package/ Case | Module |
Supplier Device Package | Module |
新聞資訊
ROHM Semiconductor FET、MOSFET 陣列 產品 BSM300D12P4G101
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