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BSM300D12P4G101

¥7008.91

1200V, 291A, HALF BRIDGE, FULL S

參數名稱參數值
Product StatusActive
TechnologySilicon Carbide (SiC)
Configuration2 N-Channel
FET FeatureStandard
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C291A (Tc)
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id4.8V @ 145.6mA
Gate Charge (Qg) (Max) @ Vgs-
Input Capacitance (Ciss) (Max) @ Vds30000pF @ 10V
Power - Max925W (Tc)
Operating Temperature175°C (TJ)
Mounting TypeChassis Mount
Package/ CaseModule
Supplier Device PackageModule

新聞資訊

ROHM Semiconductor FET、MOSFET 陣列 產品 BSM300D12P4G101

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