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TT8K11TCR

¥1.38
FET、MOSFET 陣列

MOSFET 2N-CH 30V 3A TSST8

參數(shù)名稱參數(shù)值
Product StatusNot For New Designs
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual)
FET FeatureLogic Level Gate, 4V Drive
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C3A
Rds On (Max) @ Id, Vgs71mOhm @ 3A, 10V
Vgs(th) (Max) @ Id2.5V @ 1A
Gate Charge (Qg) (Max) @ Vgs2.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds140pF @ 10V
Power - Max1W
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package/ Case8-SMD, Flat Lead
Supplier Device Package8-TSST

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ROHM Semiconductor FET、MOSFET 陣列 產(chǎn)品 TT8K11TCR

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