HP8S36TB
￥5.11
30V NCH+NCH MIDDLE POWER MOSFET,
| 參數(shù)名稱 | 參數(shù)值 |
|---|---|
| Product Status | Not For New Designs |
| Technology | - |
| Configuration | 2 N-Channel (Half Bridge) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 27A, 80A |
| Rds On (Max) @ Id, Vgs | 2.4mOhm @ 32A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 47nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 6100pF @ 15V |
| Power - Max | 29W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package/ Case | 8-PowerTDFN |
| Supplier Device Package | 8-HSOP |
新聞資訊
ROHM Semiconductor FET、MOSFET 陣列 產(chǎn)品 HP8S36TB
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