RFUH10NS6SFHTL
￥9.43
DIODE GEN PURP 600V 10A LPDS
| 參數(shù)名稱(chēng) | 參數(shù)值 |
|---|---|
| Product Status | Active |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Current - Average Rectified (Io) | 10A |
| Voltage - Forward (Vf) (Max) @ If | 2.8 V @ 10 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 25 ns |
| Current - Reverse Leakage @ Vr | 10 μA @ 600 V |
| Capacitance @ Vr, F | 157pF @ 0V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package | LPDS |
| Operating Temperature - Junction | 150°C (Max) |
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ROHM Semiconductor 單二極管 產(chǎn)品 RFUH10NS6SFHTL
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