| 參數(shù)名稱 | 參數(shù)值 |
|---|---|
| Product Status | Active |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 10A |
| Voltage - Forward (Vf) (Max) @ If | 1.45 V @ 10 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 50 μA @ 650 V |
| Capacitance @ Vr, F | 500pF @ 1V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | 4-PowerVSFN |
| Supplier Device Package | 5-DFN (8x8) |
| Operating Temperature - Junction | -55°C ~ 175°C |
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Bourns, Inc. 單二極管 產(chǎn)品 BSDL10S65E6
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